TLE2062BM

制造商:

分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 运算放大器

描述: 军用级、双通道、36V、2MHz、输入接近 V+、500μV 失调电压、JFET 输入运算放大器

物料参数

Number of channels:2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V):36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V):7
Rail-to-rail:In to V+
GBW (typ) (MHz):2
Slew rate (typ) (V/µs):3.4
Vos (offset voltage at 25°C) (max) (mV):1
Iq per channel (typ) (mA):0.312
Vn at 1 kHz (typ) (nV√Hz):40
Rating:Military
Operating temperature range (°C):-55 to 125
Offset drift (typ) (µV/°C):6
Input bias current (max) (pA):60
CMRR (typ) (dB):90
Iout (typ) (A):0.045
Architecture:FET
Input common mode headroom (to negative supply) (typ) (V):3
Input common mode headroom (to positive supply) (typ) (V):1
Output swing headroom (to negative supply) (typ) (V):1.3
Output swing headroom (to positive supply) (typ) (V):-1.3
Number of channels:2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V):36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V):7
Rail-to-rail:In to V+
GBW (typ) (MHz):2
Slew rate (typ) (V/µs):3.4
Vos (offset voltage at 25°C) (max) (mV):1
Iq per channel (typ) (mA):0.312
Vn at 1 kHz (typ) (nV√Hz):40
Rating:Military
Operating temperature range (°C):-55 to 125
Offset drift (typ) (µV/°C):6
Input bias current (max) (pA):60
CMRR (typ) (dB):90
Iout (typ) (A):0.045
Architecture:FET
Input common mode headroom (to negative supply) (typ) (V):3
Input common mode headroom (to positive supply) (typ) (V):1
Output swing headroom (to negative supply) (typ) (V):1.3
Output swing headroom (to positive supply) (typ) (V):-1.3